ICSCRM2026
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[We-P-10]
Comparison of On-State and Switching Performance of High-Voltage 4H-SiC n-Channel IGBTs and DMOSFETs
*Thomas Gonzaga
1
, Dallas Morisette
1
, James Cooper
2
(1. Purdue Univ. (USA), 2. Sonrisa Res. (USA))
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