Presentation Information
[We-P-11]Wafer-Level Testing of SiC Power Devices > 10 kV: Methods, Limitaions and Challenges
*Marcel Dinse1, Nadja Klipfel2, Nazareno Donato3, Jan-Hendrik Peters1, Giovanni Alfieri2, Marco Pocaterra2, Sami Bolat2, Nando Kaminski1 (1. Univ. of Bremen (Germany), 2. Hitachi Energy Ltd. (Switzerland), 3. Univ. of Cambridge (UK))