Presentation Information
[We-P-12]OBIC Measurements On 4H-SiC Thyristors Protected by Etched Junction Termination Extension
*Rabei Barhoumi1, Luong-Viet Phung1, Camille Sonneville1, Sigo Scharnholz2, Milan Zuvic2, Ralf Hassdorf2, Dominique Planson1 (1. Univ. of Lyon (France), 2. French-German Research Institute of Saint-Louis (ISL) (France))