Presentation Information
[We-P-16]Single Event Transient Suppression in 4H-SiC MOSFETs on V-doped Semi-Insulating Substrates
*Taisei Ozaki1, Takahiro Makino2, Kazutoshi Kojima3, Takeshi Ohshima2, Shin-Ichiro Kuroki1 (1. Hiroshima Univ. (Japan), 2. QST (Japan), 3. AIST (Japan))