Presentation Information
[We-P-17]Leakage current instability of Gamma-ray-irradiated SiC junction field effect transistors
*Akinori Takeyama1, Takahiro Makino1, Yasunori Tanaka2, Shin-Ichiro Kuroki3, Takeshi Ohshima1 (1. National Institutes for Quantum Science and Technology (QST) (Japan), 2. National Institute of Advanced Industrial Science and Technology (AIST) (Japan), 3. Research Institute for Semiconductor Engineering, Hiroshima University (Japan))