[We-P] Poster Session

[We-P-18] Effect of gamma-ray irradiation on the I-V characteristics of level shifting diodes in SiC JFET analog circuits

*Masayuki Yamamoto^1,2, Ryuya Hirose^1,2, Daisuke Watanabe^1,2, Akinori Takeyama³, Hitoshi Umezawa¹, Takahide Sato², Takahiro Makino³, Takeshi Ohshima³, Shin-ichiro Kuroki⁴ (1. National Institute of Advanced Industrial Science and Technology (AIST) (Japan), 2. University of Yamanashi (Japan), 3. QST (Japan), 4. Hiroshima University (Japan))