Presentation Information

[We-P-21]Comparative Study of Gate Oxide Screening With Adjustment Pulse Technique using Commercial and In-House 4H-SiC MOSFETs

*Monikuntala Bhattacharya1, Michael Jin2, Marvin H White2, Atsushi Shimbori3, Anant K Agarwal2 (1. L&T Semiconductor Technologies (India), 2. The Ohio State University (USA), 3. Ford Motor Company (USA))