Presentation Information
[We-P-22]Achieving Extrinsic-Free Gate Oxide Reliability in 1200 V SiC MOSFETs: A Large-Scale Statistical Study Validating the Thermo-Cheminal E-Model at 175 ℃
*DAHUI YOO1, Chang-Heon Yang1, Wonchul Baek2, Soochang Kang2, Lorenzo Marchesi3, Alessandro Polpetta3, In-Hwan Ji2, Derek Lee2 (1. SK-powertech Inc. (Korea), 2. SK-Keyfoundry Inc. (Korea), 3. EDA Indus. (Italy))