[We-P] Poster Session

[We-P-26] A New Charge-to-breakdown-based Lifetime Prediction Model for Thermally Grown Gate Oxides in SiC Power MOSFETs

*Jiashu Qian¹, Hengyu Yu¹, Limeng Shi¹, Michael Jin¹, Monikuntala Bhattacharya¹, Atsushi Shimbori², Marvin H. White¹, Anant K. Agarwal¹ (1. The Ohio State University (USA), 2. Ford Auto Co. (USA))