Presentation Information
[We-IP]Gate-Oxide Protection for Enhanced Single-Event Robustness in SiC Power MOSFETs
*Heng WANG1,2, Yun XIA1, LyuZhang PENG3, ChangWei Zheng1, SiRui FENG1, XinPeng LIN1, Pengwei ZHOU2, YingChen YANG2, Gang CHEN1, YuXi WAN1, Gang Lyu3, Kevin Jing CHEN2 (1. Shenzhen Pinghu Lab. (China), 2. The Hong Kong Univ. of Sci. and Tech. (Hong Kong), 3. Beihang Univ. (China))