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[We-P-29]
Characterization of Trench Sidewall Channel Mobility in 4H-SiC using Lateral Trench MOSFETs
*Woongsun Kim
1
, Naeem Islam
1
, Shane Stein
1
, Sei-Hyung Ryu
1
, Adam Barkley
1
, Elif Balkas
1
(1. Wolfspeed (USA))
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