Presentation Information

[We-P-29]Characterization of Trench Sidewall Channel Mobility in 4H-SiC using Lateral Trench MOSFETs

*Woongsun Kim1, Naeem Islam1, Shane Stein1, Sei-Hyung Ryu1, Adam Barkley1, Elif Balkas1 (1. Wolfspeed (USA))