Session Details
[We-P]MOS Gate Stack Processing and Characterization
Wed. Sep 30, 2026 4:00 PM - 6:00 PM JST
Wed. Sep 30, 2026 7:00 AM - 9:00 AM UTC
Wed. Sep 30, 2026 7:00 AM - 9:00 AM UTC
Poster-B(4th Floor, G401+G402)
[We-P-29]Characterization of Trench Sidewall Channel Mobility in 4H-SiC using Lateral Trench MOSFETs
*Woongsun Kim1, Naeem Islam1, Shane Stein1, Sei-Hyung Ryu1, Adam Barkley1, Elif Balkas1 (1. Wolfspeed (USA))
[We-P-30]Sidewall Orientation Effects on Channel Mobility in SiC Vertical Trench Power MOSFETs Extracted by Four-Terminal Transcharacteristic Method
*Luca Zumbo1, Mattia Rossetti1, Luca Oldani1, Melanie Micali1, Edoardo Zanetti1, Marco Camalleri1, Laura Scalia1, Andrea Severino1, Alfio Guarnera1, Mario Saggio1 (1. STMicroelectronics (Italy))
[We-P-31]An investigation of m-face SiC loss rate on thermal oxidation process
*Youngbin Im1, Helen Jeong1, Bokyun Seo1, Junghye Lee1, Youngkwon Kang1, MK Ko1 (1. onsemi (Korea))
[We-P-32]Crystal-Orientation-Dependent Electrical Characteristics and Bias-Stress Reliability of 4H-SiC Trench MOSFETs
*Zijie Zheng1,2, Yu-Chieh Chien1, Xiaolin Wang1,2, Leming Jiao1,2, Runze Wang1, Liyuan Liu1, Weijie Wang1, Xinghua Wang1, Abdul Hannan Yeo1, Qin Gui Voo1, Umesh Chand1, Xiao Gong1,2, Navab Singh1, Yee Chia Yeo1,2 (1. Agency for Sci., Tech. and Res. (Singapore), 2. National Univ. of Singapore (Singapore))
[We-P-33]Impact of NO Annealing on Gate Switching Instability of SiC Trench MOSFETs
*Matteo Nigris1, Dick Scholten1, Johannes Ziegler1, Ingmar Kallfass2 (1. Indus. of Robert Bosch GmbH (Germany), 2. Univ. of Stuttgart (Germany))
[We-P-34]Pulsed gate voltage transfer characteristic of SiC MOSFETs for improved VTH extraction
*Enea Bianda1, Elena Mengotti1, Gerd Schlottig1 (1. ABB Corporate Research (Switzerland))
[We-P-35]Influence of Interface Traps on Gate-Capacitance Peak Under Drain Bias in SiC Trench MOSFET
*Ilaria Matacena1, Luca Maresca1, Andrea Irace1, Santolo Daliento1 (1. University of Naples Federico II (Italy))
[We-P-36]High Sensitivity Temperature Sensors with SiC MOS Capacitors Fabricated Using Grown Polyoxides
*Razvan Pascu1, Gheorghe Pristavu2, Gheorghe Brezeanu2, Mihaela Kusko1 (1. National Institute for Research and Development in Microtechnologies -IMT Bucharest (Romania), 2. National University of Science and Technology Politehnica Bucharest (Romania))