Session Details
[We-P]Poster Session
Wed. Sep 30, 2026 4:00 PM - 6:00 PM JST
Wed. Sep 30, 2026 7:00 AM - 9:00 AM UTC
Wed. Sep 30, 2026 7:00 AM - 9:00 AM UTC
Poster-B (4th Floor, G401+G402)
[We-P-29]Characterization of Trench Sidewall Channel Mobility in 4H-SiC using Lateral Trench MOSFETs
*Woongsun Kim1, Naeem Islam1, Shane Stein1, Sei-Hyung Ryu1, Adam Barkley1, Elif Balkas1 (1. Wolfspeed (USA))
[We-P-30]Sidewall Orientation Effects on Channel Mobility in SiC Vertical Trench Power MOSFETs Extracted by Four-Terminal Transcharacteristic Method
*Luca Zumbo1, Mattia Rossetti1, Luca Oldani1, Melanie Micali1, Edoardo Zanetti1, Marco Camalleri1, Laura Scalia1, Andrea Severino1, Alfio Guarnera1, Mario Saggio1 (1. STMicroelectronics (Italy))
[We-P-31]An investigation of m-face SiC loss rate on thermal oxidation process
*Youngbin Im1, Helen Jeong1, Bokyun Seo1, Junghye Lee1, Youngkwon Kang1, MK Ko1 (1. onsemi (Korea))
[We-P-32]Crystal-Orientation-Dependent Electrical Characteristics and Bias-Stress Reliability of 4H-SiC Trench MOSFETs
*Zijie Zheng1,2, Yu-Chieh Chien1, Xiaolin Wang1,2, Leming Jiao1,2, Runze Wang1, Liyuan Liu1, Weijie Wang1, Xinghua Wang1, Abdul Hannan Yeo1, Qin Gui Voo1, Umesh Chand1, Xiao Gong1,2, Navab Singh1, Yee Chia Yeo1,2 (1. Agency for Sci., Tech. and Res. (Singapore), 2. National Univ. of Singapore (Singapore))
[We-P-33]Impact of NO Annealing on Gate Switching Instability of SiC Trench MOSFETs
*Matteo Nigris1, Dick Scholten1, Johannes Ziegler1, Ingmar Kallfass2 (1. Indus. of Robert Bosch GmbH (Germany), 2. Univ. of Stuttgart (Germany))
[We-P-34]Pulsed gate voltage transfer characteristic of SiC MOSFETs for improved VTH extraction
*Enea Bianda1, Elena Mengotti1, Gerd Schlottig1 (1. ABB Corporate Research (Switzerland))
[We-P-35]Influence of Interface Traps on Gate-Capacitance Peak Under Drain Bias in SiC Trench MOSFET
*Ilaria Matacena1, Luca Maresca1, Andrea Irace1, Santolo Daliento1 (1. University of Naples Federico II (Italy))
[We-P-36]High Sensitivity Temperature Sensors with SiC MOS Capacitors Fabricated Using Grown Polyoxides
*Razvan Pascu1, Gheorghe Pristavu2, Gheorghe Brezeanu2, Mihaela Kusko1 (1. National Institute for Research and Development in Microtechnologies -IMT Bucharest (Romania), 2. National University of Science and Technology Politehnica Bucharest (Romania))
[We-P-37]4H-SiC Deep Trench Development for Superjunction Devices
*Oleg Rusch1, Stephan Kuehn2, Maximilian Szabo1 (1. Fraunhofer IISB (Germany), 2. Chair of Electron Devices, University of Erlangen-Nuremberg (Germany))
[We-P-38]Corners shaping of low dimension SiC trenches by plasma processing
Katarzyna Izabela Stokeley1, *Zareena Hassanbee Mohammed Sheikh Allawudeen1 (1. Oxford Instruments Plasma Technology (UK))
[We-P-39]CD-SEM Enabled Measurement of Etched Trench Sidewall Roughness
*Paul Smith1, Daniel Fischer1, Shimon Levi2, Oleg Rusch3, Alesa Fuchs3 (1. Applied Materials GmbH (Germany), 2. Applied Materials Ltd. (Israel), 3. Fraunhofer IISB (Germany))
[We-P-40]Multi-Scale Modeling and Experimental Analysis of SiC Gate Trench Profile Control in ICP-RIE Chamber
*Yury Shustrov1, Ivan Petraš1, Andrey Smirnov1, Oleg Rusch2 (1. Semiconductor Technology Research d.o.o. Beograd (Serbia), 2. Fraunhofer IISB (Germany))
[We-P-41]Damage-free Dicing of SiC Substrate Using High-Pressure SF6 Plasma – Effect of bias voltage on etching characteristics –
*Yuken Matsumura1, Takeshi Ishikawa1, Nene Yoshimi1, Daisetsu Toh1, Jumpei Yamada1, Yasuhisa Sano1 (1. Univ. of osaka (Japan))
[We-P-42]Effect of Sputter Gas O2 Ratio on the Electrical Characteristics of (In0.1Ga0.9)2O3/4H-SiC Heterojunction Diodes
*Sabeen Hwang1, Chang-Jun Park1, Hyeon-Do Kang1, Minseok Kim1, Tae-yeong Yoon1, Chowdam Venkata Prasad1, Sang-Mo Koo1 (1. Kwangwoon Univ. (Korea))
[We-P-43]Plasma power-dependent O2-plasma recovery of dry-etch-induced damage in β-Ga2O3 Schottky barrier diodes
*Ye-Jin Kim1, Minseok Kim1, Hyeon-Do Kang1, Jin-Woo Choi1, Sabeen Hwang1, Chowdam Venkata Prasad1, Sang-Mo Koo1 (1. Kwangwoon Univ. (Korea))
[We-P-44]Enhanced Anodic Oxidation Behavior in 4H-SiC by Pulsed Voltage Control with Negative Base Bias
*Shoki Ohara1, Ryuya Matsumoto1, Aoto Hashiguchi1, Kyoya Okawa1, Motoaki Iwaya1, Tetsuya Takeuchi1, Atsushi Suzuki2, Eri Akazawa2, Yiyu Ou3, Haiyan Ou3, Satoshi Kamiyama1 (1. Meijo Univ. (Japan), 2. E&E Evolution Ltd. (Japan), 3. Technical Univ. of Denmark (Denmark))
[We-P-45]Effects of pulsed anodic oxidation conditions on the optical properties of porous fluorescent 4H-SiC
*Ryuya Matsumoto1, Shoki Ohara1, Aoto Hashiguchi1, Kyoya Okawa1, Motoaki Iwaya1, Tetsuya Takeuchi1, Satoshi Kamiyama1, Eri Akazawa2, Atushi Suzuki2, Yiyu Ou3, Haiyan Ou3 (1. Meijo University (Japan), 2. E&E Evolution (Japan), 3. Technical University of Denmark (Denmark))
[We-P-46]Effect of Facet on Electrochemical Etching Behavior of n-type 4H-SiC
*Sahand Dadashi Radvar1,2, Tingqiang Yang1,2, Florentine Scholz3,4, Georg Pfusterschmied1,2, Ulrich Schmid1 (1. TU Wien, Institute of Sensor and Actuator Systems, Gußhausstraße 27-29, 1040, Vienna (Austria), 2. Christian Doppler Laboratory for Sustainable Silicon Carbide Technology, Gußhausstraße 27-29 (Austria), 3. Analytical Instrumentation Center, TU Wien (Austria), 4. Institute of Chemical Technologies and Analytics, TU Wien, 1060 Vienna (Austria))
[We-P-47]Surface Modifications in Silicon Carbide by Electrochemical Etching
*Athul Rathnakar1, Sofia Bekau2, G Colston1, P M Gammon1, A B Renz1, M A Antoniou1, Vishal A Shah1 (1. University of Warwick, School of Engineering (UK), 2. University of Warwick, Nanofabrication RTP (UK))
[We-P-48]Influence of SiC consumption on SiC MOSFET electrical parameter
dario tenaglia1, *massimo davide pirnaci1 (1. STMicroelectronics (Italy))
[We-P-49]Focused Ion Beam Nanopillar Milling to Enhance Light Collection Efficiency from Color Centers in 4H-SiC
*Efe Eden1, Helton Goncalves de Medeiros1, Sarah Sofia Saldanha Faria1, Joakim Reuteler2, Ulrike Grossner1 (1. APS - ETH Zurich (Switzerland), 2. ScopeM - ETH Zurich (Switzerland))
[We-P-50]Integrated Entangled Photon Source with On-Chip Filtering on Silicon-Carbide-on-Insulator
*Lijun Ma1, Wenhan Sun2, Anouar Rahmouni1, Oliver Slattery1, Qing Li2 (1. National Institute of Standards and Technology (USA), 2. Carnegie Mellon University (USA))
[We-P-51]High-Efficiency Photonic Interfaces for Colour Centres in Silicon Carbide
*Nien-Hsuan Lee1,2, Erlend Ousdal1, Jonas Schmid1,2, Leonard Zimmermann1,2, Berke Demiralp3, Felix David3, Stephan Kucera1, Kevin Menguelti1, Eva Weig3,4,5, Florian Kaiser1,2 (1. Luxembourg Inst. of Sci. and Tech. (Luxembourg), 2. Univ. of Luxembourg (Luxembourg), 3. Technical Univ. of Munich (Germany), 4. Munich Center for Quantum Sci. and Tech. (Germany), 5. TUM Center for Quantum Engineering (Germany))
[We-P-52]Design and Fabrication of SiC Flat Optics for Scalable Sensors
*Matthew Traub1, Behrooz Behrooz1, John Viane1, Petr Siyushev1,2, Iakov Goldberg1, Xavier Rottenberg1 (1. imec (Belgium), 2. University of Hasselt (Belgium))
[We-P-53]A High-Throughput Technique for Color Center Quantification with Neural Networks and its Practical Application in a Surface Passivation Study
*Christian Gobert1, Glenn Held1, Oskar Reichenberger1, Sarah Saarmann1, Marina Scharin-Mehlmann1, Patrick Berwian1, Peter Evanschitzky1, Michael Krieger2, Jochen Friedrich1, Jörg Schulze1,3 (1. Fraunhofer Inst. for Integrated Systems and Device Tech. IISB (Germany), 2. Chair of Applied Physics, Univ. Erlangen-Nuremberg (FAU) (Germany), 3. Chair of Electron Devices, Univ. Erlangen-Nuremberg (FAU) (Germany))
[We-P-54]Photoluminescence Properties of Patterned Ion-Implanted Vanadium Centers in 4H-SiC
*Yoshitaro Uchida1, Shinichiro Sato2, Hidetsugu Tsuchida1,3 (1. Kyoto Univ. (Japan), 2. National Inst. for Quantum Sci. and Tech. (QST) (Japan), 3. Quantum Sci. and Engineering Center, Kyoto Univ. (Japan))
[We-P-55]The Role of Fermi-level Tuning on the Charge Stabilization of Heavy-Ion Induced Color Centers in 4H-SiC
*Sarah Sofia Saldanha Faria1, Helton Goncalves de Medeiros1, Efe Eden1, Ulrike Grossner1 (1. APS - ETH Zurich (Switzerland))
[We-P-56]FIB fabrication and integration of NIR quantum emitters in 4H-SiC
*Elena Nieto Hernandez1, Matteo Ziino2,3, Alessandro Cian1, Gioele Piccoli1, Elia Scattolo1, Greta Andrini3, Paolo Olivero2,3, Jacopo Forneris2,3, Damiano Giubertoni1 (1. Fondazione Bruno Kessler (Italy), 2. Univ. di Torino (Italy), 3. Inst. Nazionale di Fisica Nucleare (Italy))