Presentation Information
[We-P-30]Sidewall Orientation Effects on Channel Mobility in SiC Vertical Trench Power MOSFETs Extracted by Four-Terminal Transcharacteristic Method
*Luca Zumbo1, Mattia Rossetti1, Luca Oldani1, Melanie Micali1, Edoardo Zanetti1, Marco Camalleri1, Laura Scalia1, Andrea Severino1, Alfio Guarnera1, Mario Saggio1 (1. STMicroelectronics (Italy))