Presentation Information

[We-P-32]Crystal-Orientation-Dependent Electrical Characteristics and Bias-Stress Reliability of 4H-SiC Trench MOSFETs

*Zijie Zheng1,2, Yu-Chieh Chien1, Xiaolin Wang1,2, Leming Jiao1,2, Runze Wang1, Liyuan Liu1, Weijie Wang1, Xinghua Wang1, Abdul Hannan Yeo1, Qin Gui Voo1, Umesh Chand1, Xiao Gong1,2, Navab Singh1, Yee Chia Yeo1,2 (1. Agency for Sci., Tech. and Res. (Singapore), 2. National Univ. of Singapore (Singapore))