Presentation Information
[We-P-33]Impact of NO Annealing on Gate Switching Instability of SiC Trench MOSFETs
*Matteo Nigris1, Dick Scholten1, Johannes Ziegler1, Ingmar Kallfass2 (1. Indus. of Robert Bosch GmbH (Germany), 2. Univ. of Stuttgart (Germany))
