[We-P] Implantation, Contacts, Etching, and Other Processes

[We-P-37] 4H-SiC Deep Trench Development for Superjunction Devices

*Oleg Rusch¹, Stephan Kuehn², Maximilian Szabo¹ (1. Fraunhofer IISB (Germany), 2. Chair of Electron Devices, University of Erlangen-Nuremberg (Germany))