[We-P] Implantation, Contacts, Etching, and Other Processes | ICSCRM2026

Session Details

Poster SessionTrack 06 Implantation, Contacts, Etching, and Other Processes

[We-P]Implantation, Contacts, Etching, and Other Processes

Wed. Sep 30, 2026 4:00 PM - 6:00 PM JST
Wed. Sep 30, 2026 7:00 AM - 9:00 AM UTC

Poster-B(4th Floor, G401+G402)

[We-P-37]4H-SiC Deep Trench Development for Superjunction Devices

*Oleg Rusch¹, Stephan Kuehn², Maximilian Szabo¹ (1. Fraunhofer IISB (Germany), 2. Chair of Electron Devices, University of Erlangen-Nuremberg (Germany))

[We-P-38]Corners shaping of low dimension SiC trenches by plasma processing

Katarzyna Izabela Stokeley¹, *Zareena Hassanbee Mohammed Sheikh Allawudeen¹ (1. Oxford Instruments Plasma Technology (UK))

[We-P-39]CD-SEM Enabled Measurement of Etched Trench Sidewall Roughness

*Paul Smith¹, Daniel Fischer¹, Shimon Levi², Oleg Rusch³, Alesa Fuchs³ (1. Applied Materials GmbH (Germany), 2. Applied Materials Ltd. (Israel), 3. Fraunhofer IISB (Germany))

[We-P-40]Multi-Scale Modeling and Experimental Analysis of SiC Gate Trench Profile Control in ICP-RIE Chamber

*Yury Shustrov¹, Ivan Petraš¹, Andrey Smirnov¹, Oleg Rusch² (1. Semiconductor Technology Research d.o.o. Beograd (Serbia), 2. Fraunhofer IISB (Germany))

[We-P-41]Damage-free Dicing of SiC Substrate Using High-Pressure SF₆ Plasma – Effect of bias voltage on etching characteristics –

*Yuken Matsumura¹, Takeshi Ishikawa¹, Nene Yoshimi¹, Daisetsu Toh¹, Jumpei Yamada¹, Yasuhisa Sano¹ (1. Univ. of osaka (Japan))

[We-P-42]Effect of Sputter Gas O₂ Ratio on the Electrical Characteristics of (In_0.1Ga_0.9)₂O₃/4H-SiC Heterojunction Diodes

*Sabeen Hwang¹, Chang-Jun Park¹, Hyeon-Do Kang¹, Minseok Kim¹, Tae-yeong Yoon¹, Chowdam Venkata Prasad¹, Sang-Mo Koo¹ (1. Kwangwoon Univ. (Korea))

[We-P-43]Plasma power-dependent O₂-plasma recovery of dry-etch-induced damage in β-Ga₂O₃ Schottky barrier diodes

*Ye-Jin Kim¹, Minseok Kim¹, Hyeon-Do Kang¹, Jin-Woo Choi¹, Sabeen Hwang¹, Chowdam Venkata Prasad¹, Sang-Mo Koo¹ (1. Kwangwoon Univ. (Korea))

[We-P-44]Enhanced Anodic Oxidation Behavior in 4H-SiC by Pulsed Voltage Control with Negative Base Bias

*Shoki Ohara¹, Ryuya Matsumoto¹, Aoto Hashiguchi¹, Kyoya Okawa¹, Motoaki Iwaya¹, Tetsuya Takeuchi¹, Atsushi Suzuki², Eri Akazawa², Yiyu Ou³, Haiyan Ou³, Satoshi Kamiyama¹ (1. Meijo Univ. (Japan), 2. E&E Evolution Ltd. (Japan), 3. Technical Univ. of Denmark (Denmark))

[We-P-45]Effects of pulsed anodic oxidation conditions on the optical properties of porous fluorescent 4H-SiC

*Ryuya Matsumoto¹, Shoki Ohara¹, Aoto Hashiguchi¹, Kyoya Okawa¹, Motoaki Iwaya¹, Tetsuya Takeuchi¹, Satoshi Kamiyama¹, Eri Akazawa², Atushi Suzuki², Yiyu Ou³, Haiyan Ou³ (1. Meijo University (Japan), 2. E&E Evolution (Japan), 3. Technical University of Denmark (Denmark))

[We-P-46]Effect of Facet on Electrochemical Etching Behavior of n-type 4H-SiC

*Sahand Dadashi Radvar^1,2, Tingqiang Yang^1,2, Florentine Scholz^3,4, Georg Pfusterschmied^1,2, Ulrich Schmid¹ (1. TU Wien, Institute of Sensor and Actuator Systems, Gußhausstraße 27-29, 1040, Vienna (Austria), 2. Christian Doppler Laboratory for Sustainable Silicon Carbide Technology, Gußhausstraße 27-29 (Austria), 3. Analytical Instrumentation Center, TU Wien (Austria), 4. Institute of Chemical Technologies and Analytics, TU Wien, 1060 Vienna (Austria))

[We-P-47]Surface Modifications in Silicon Carbide by Electrochemical Etching

*Athul Rathnakar¹, Sofia Bekau², G Colston¹, P M Gammon¹, A B Renz¹, M A Antoniou¹, Vishal A Shah¹ (1. University of Warwick, School of Engineering (UK), 2. University of Warwick, Nanofabrication RTP (UK))

[We-P-48]Influence of SiC consumption on SiC MOSFET electrical parameter

dario tenaglia¹, *massimo davide pirnaci¹ (1. STMicroelectronics (Italy))

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