Presentation Information
[We-P-40]Multi-Scale Modeling and Experimental Analysis of SiC Gate Trench Profile Control in ICP-RIE Chamber
*Yury Shustrov1, Ivan Petraš1, Andrey Smirnov1, Oleg Rusch2 (1. Semiconductor Technology Research d.o.o. Beograd (Serbia), 2. Fraunhofer IISB (Germany))
