Presentation Information
[We-P-41]Damage-free Dicing of SiC Substrate Using High-Pressure SF6 Plasma – Effect of bias voltage on etching characteristics –
*Yuken Matsumura1, Takeshi Ishikawa1, Nene Yoshimi1, Daisetsu Toh1, Jumpei Yamada1, Yasuhisa Sano1 (1. Univ. of osaka (Japan))