[We-P] Poster Session

[We-P-46] Effect of Facet on Electrochemical Etching Behavior of n-type 4H-SiC

*Sahand Dadashi Radvar^1,2, Tingqiang Yang^1,2, Florentine Scholz^3,4, Georg Pfusterschmied^1,2, Ulrich Schmid¹ (1. TU Wien, Institute of Sensor and Actuator Systems, Gußhausstraße 27-29, 1040, Vienna (Austria), 2. Christian Doppler Laboratory for Sustainable Silicon Carbide Technology, Gußhausstraße 27-29 (Austria), 3. Analytical Instrumentation Center, TU Wien (Austria), 4. Institute of Chemical Technologies and Analytics, TU Wien, 1060 Vienna (Austria))