[We-P] Poster Session

[We-P-79] Impact of Material Crystal Point Defects and Technology Generation on Switching Losses of 3.3kV SiC MOSFETs

*Nadja Isabelle Desiree Klipfel¹, Clement Bongini¹, Giovanni Alfieri¹, Eduardo Ceccarelli¹, Sami Bolat¹, Moritz Wehrle¹, Elizabeth Buitrago¹, Matthieu Lecroq², Walter Schwarzenbach², Eric Guiot (1. Corp. Hitachi Energy (Switzerland), 2. Corp. SOITEC (France))