Session Details
[We-P]Poster Session
Wed. Sep 30, 2026 4:00 PM - 6:00 PM JST
Wed. Sep 30, 2026 7:00 AM - 9:00 AM UTC
Wed. Sep 30, 2026 7:00 AM - 9:00 AM UTC
Poster-C (4th Floor, G403+G404)
[We-P-57]Significant Reduction of Crystallographic Defects in 8-inch 4H-SiC Crystals via Optimization of Seed-Adhesion Interface Structure
*SUHO KIM1, Jung Gyu Kim1, Myung Ok Kyun1, Yeon Suk Jang1, Kap Ryeol Ku1, Jung Gon Kim2, Gwang Hee Jung2, Won Jae Lee2 (1. EINCRYSTAL Co.,Ltd. (Korea), 2. Univ. of Dong-Eui (Korea))
[We-P-58]Optimization of SiC Bulk Growth via the PVT Process with a Physics-Informed Approach Combining Multi-Agent Design and Bayesian Optimization
*Tae-Yong Park1, Chang-Jae Yoon1, Hoang-Linh Nguyen1, Yun-Ji Shin1, Yeon-Suk Jang2, Kap-Ryeol Ku2, Seong-Min Jeong1 (1. Korea Institute of Ceramic Engineering and Technology (Korea), 2. EIN Crystals Co. Ltd. (Korea))
[We-P-59]Optimization of Process Condition Sequences for Long-Duration SiC Solution Growth under Time-Evolving Physical Fields
Takanao Sakamoto, Kentaro Kutsukake, Shunta Harada, *TORU UJIHARA1 (1. Nagoya Univ. (Japan))
[We-P-60]Preparation and characterization of 12-inch conductive 4H-SiC single crystal substrate
Yanfang Lou1, Liwei Fan1, Jing Yao1, Tonghua Peng1, Jian Yang1, *Chunjun Liu1 (1. TanKeBlue Semiconductor Corp., Ltd. (China))
[We-P-61]SiC Growth Rate Profile Using Multi-Wafer Close-Space Sublimation
*Hiroyuki Nagasawa1 (1. CUSIC Inc. (Japan))
[We-P-62]Novel approaches for volumetric information in 4H-SiC wafers and boules at an industrial scale in a production environment.
*Jimmy Thörnberg1, Torben L. Purz2, Anton Vakulenko2, Eric W. Martin2, Björn Magnusson1 (1. STMicroelectronics Silicone Carbide AB (Sweden), 2. MONSTR Sense Technologies (USA))
[We-P-63]Electronic Structure Theory for Polytype Nucleus Stability
*Kenji Hayashida1 (1. Research Center for Computational Science and Informatics, Resonac Corp. (Japan))
[We-P-64]Multiscale Atomistic Investigation of Polytype Stability and Growth Kinetics in SiC PVT Growth
*Kevin Kayang1, Aakash Kumar1, Zeyu Chen1, Balaji Raghothamachar1, Michael Dudley1, Dilip Gersappe1 (1. Stony Brook University (USA))
[We-P-65]PVT-Reactor Structure Optimization through a Comprehensive Parameter Sweep by High-Precision Surrogate Models
*Kenji Hayashida1, Yohei Fujikawa2 (1. Research Center for Computational Science and Informatics, Resonac Corp. (Japan), 2. Resonac Corp. (Japan))
[We-P-66]Utilization of Anisotropic Graphite for Thermal Distribution Control toward SiC Sublimation Growth with Higher Growth Rate
*Shigeyuki Kuboya1, Kazuma Eto1, Yukio Nagahata2, Takeshi Mitani1, Shunsuke Noguchi2, Yohei Fujikawa2, Kenji Momose2, Tomohisa Kato1 (1. National Institute of Advanced Industrial Science and Technology (AIST) (Japan), 2. Resonac Corporation (Japan))
[We-P-67]Elucidating the Effects of CeO2 on the PVT Growth of 4H-SiC
*Katherine Thompson1,2, Riasat Islam1,2, Mathias Yost1,2,3, Anirban Phukan1,2, Stanislav Udovenko1,2, Ian Binnie1,2, Yuan Xuan1,2, Adri van Duin1,2, Randy Vander Wal1,2, Darren Pagan1,2, Joshua Robinson1,2 (1. The Pennsylvania State Univ. (USA), 2. Silicon Carbide Innovation Alliance (USA), 3. Morgan Advanced Materials (USA))
[We-P-68]Sparse Sensing-Based Response-Surface Modeling of PVT Reactor Characteristics: Methods and Use Cases
*Lorenz Taucher1, Zaher Ramadan1, Shaukat Lone2, Ben Depuydt2, Lorenz Romaner1 (1. Montanuniversität Leoben (Austria), 2. EEMCO GmbH (Austria))
[We-P-69]Unveiling a New Class of Triangular Defects in 4H-SiC Through Multi Scale Analysis
*Cristiano Calabretta1, Beatrice Carbone1, Corrado Bongiorno2, Nicolò Piluso1, Cettina Bottari1, Fabiana Vento1, Giuseppe Arena1, Mario Santi Alessandrino1, Andrea Severino1 (1. Indus. STMICROELECTRONICS (Italy), 2. Inst. CNR-IMM (Italy))
[We-P-70]Toward Multiscale Evaluation of 4H-SiC Wafer Quality by Integrating Wafer-Scale Signatures and Microscopic Defect Inspection
*Koji Ashida1, Daichi Dojima1, Mariko Takahara1, Shota Fujiki3, Kohei Toda1, Hiroshi Mihara1, Mari Yamamoto3, Tadaaki Kaneko1,2 (1. QureDA Research, Inc. (Japan), 2. Kwansei Gakuin University (Japan), 3. Lasertec Corporation (Japan))
[We-P-71]Reducing Annotation Cost in Semiconductor Wafer Defect Classification through Self-Supervised Domain Pre-Training
*Alvin Kiptoo Chirchir1, Matt Roach1, Owen Guy1, Mike Jennings1, Jacob Mitchell2, Justin Lach2 (1. Swansea University (UK), 2. KLA Corp. (USA))
[We-P-72]Rapid Evaluation of Threading Dislocations during Initial-Stage PVT Growth of 4H-SiC Crystals
*Govindhan Dhanaraj1, Xueping Xu1, Rajan Rengarajan1 (1. Coherent Corporation (USA))
[We-P-73]Multi-channel defect inspection of 4H-SiC epitaxial wafers by using a single convolutional neural network trained on composite images from different inspection techniques
*Masaki Hasegawa1, Koichi Endo1, Junji Senzaki1 (1. Nat. Inst. of Adv. Indus. Sci. and Tech. (Japan))
[We-P-74]Scan-Based UV Wafer Screening of Bipolar-Degradation Susceptibility in 4H-SiC via Practical Irradiance-Threshold Mapping
*Takuya Morita1, Kaoru Sugihara1 (1. ITES CO., LTD. (Japan))
[We-P-75]Demonstration of Synchrotron X-ray Topography over an Entire 200-mm 4H-SiC Wafer
*Shunta Harada1, Juheyong Sun1, Kota Tsujimori1, Kentaro Kajiwara2, Takayoshi Shimura3 (1. Nagoya Univ. (Japan), 2. JASRI (Japan), 3. Waseda Univ. (Japan))
[We-P-76]Whole-Wafer Imaging of 6-inch 4H-SiC Wafers using Synchrotron X-ray Topography and Automated Defect Classification
*Yuhui Huang1, Rui Zhou1, Weiyuan Xia1, Kentaro Kajiwara2, Takashi Kameshima2,3, Taito Osaka3, Makina Yabashi3, Takayoshi Shimura1,3 (1. Waseda Univ. (Japan), 2. Japan Synchrotron Radiation Research Inst. (Japan), 3. RIKEN SPring-8 Center (Japan))
[We-P-77]Investigation of the Formation and Propagation of Polytype Inclusions in PVT-Grown 4H-SiC Crystals by Synchrotron X-ray Topography
*Jianpei Zhang1, Zeyu Chen1, Haochi Wang1, Kaixuan Zhang1, Jaehyun Suh1, Balaji Raghothamachar1, Evan Moe2, Yafei Liu2, Michael Dudley1 (1. Stony Brook University (USA), 2. Onsemi (USA))
[We-P-78]Algorithm for automated multimodal characterization of dislocations in 4H-SiC wafers using X-ray topography and polarized light microscopy
*Kosei Takahashi1, Kota Tsujimori2, Michio Kawase1, Keisuke Seo1, Seiya Mizutani3, Yuya Mizutani3, Seiji Mizutani3, Kenta Shimamoto4, Kenta Murayama3, Shunta Harada1,2 (1. Nagoya Univ. (Japan), 2. SSR Corp. (Japan), 3. Mipox Corp. (Japan), 4. Rigaku Corp. (Japan))
[We-P-79]Impact of Material Crystal Point Defects and Technology Generation on Switching Losses of 3.3kV SiC MOSFETs
*Nadja Isabelle Desiree Klipfel1, Clement Bongini1, Giovanni Alfieri1, Eduardo Ceccarelli1, Sami Bolat1, Moritz Wehrle1, Elizabeth Buitrago1, Matthieu Lecroq2, Walter Schwarzenbach2, Eric Guiot (1. Corp. Hitachi Energy (Switzerland), 2. Corp. SOITEC (France))
[We-P-80]Electrical characterization of a 15 kV 4H-SiC p+-i-n diode
*Giovanni Alfieri1, Nadja Klipfel1, Marco Pocaterra1, Boni Boksteen1, Stephanie Fernandez1, Pierre-Edouard Raynal1, Nazareno Donato2, Martin Kah2, Giulio Pellegrini3, Luis Figueras3, Adolf Schöner4 (1. Hitachi Energy (Switzerland), 2. Cambridge University (UK), 3. CSIC (Spain), 4. RISE (Sweden))
[We-P-81]Impact of High-Energy Proton-Irradiation on Charge Carrier Dynamics in 4H-SiC
*Natalija Für1, Rishi Kupper1, Helton Goncalves de Medeiros1, Efe Eden1, Ulrike Grossner1 (1. APS - ETH Zurich (Switzerland))
[We-P-82]Characterization of defects induced by heavy ion irradiation in 4H-SiC with low-energy muon spin spectroscopy
*Maria Mendes Martins1, Helton Goncalves de Medeiros1, Gianluca Janka2, Natalija Für1, Efe Eden1, Thomas Prokscha2, Ulrike Grossner1 (1. APS - ETH Zurich (Switzerland), 2. PSI CNM Sci. (Switzerland))
[We-P-83]Deep-Level Characterization of Electron-Irradiated Diamond Device Using Alpha-Particle Charge Transient Spectroscopy
shin-ichiro Sato1, *Naoya Iwamoto2, Yuji Sone1, Tsubasa Matsumoto3 (1. National Institutes for Quantum Science and Technology (Japan), 2. National Institute of Technology, Kagawa College (Japan), 3. Kanazawa University (Japan))
[We-P-84]Conduction-band-side interface states at the wet-oxidized 4H-SiC(0001)/SiO2 interface revealed by Electrically-Detected-Magnetic-Resonance (EDMR) spectroscopy
*Bunta Shimabukuro1, Keigo Adachi1, Mitsuru Sometani2, Hirohisa Hirai2, Heiji Watanabe3, Takahide Umeda1 (1. Univ. of Tsukuba (Japan), 2. National Inst. for Advanced Indus. Sci. and Tech. (Japan), 3. Univ. of Osaka (Japan))
[We-P-85]Quantitative Ab Initio Determination of Interface State Density Induced by Carbon Defects at SiC/SiO2 Interfaces
Yu Zhou1, Gunnar Russberg2, *Giovanni Alfieri3, Emil Håkansson2 (1. Hitachi Energy (China) Ltd. (China), 2. Hitachi Energy Sweden AB (Sweden), 3. Hitachi Energy Ltd. (Switzerland))