Presentation Information
[We-P-80]Electrical characterization of a 15 kV 4H-SiC p+-i-n diode
*Giovanni Alfieri1, Nadja Klipfel1, Marco Pocaterra1, Boni Boksteen1, Stephanie Fernandez1, Pierre-Edouard Raynal1, Nazareno Donato2, Martin Kah2, Giulio Pellegrini3, Luis Figueras3, Adolf Schöner4 (1. Hitachi Energy (Switzerland), 2. Cambridge University (UK), 3. CSIC (Spain), 4. RISE (Sweden))
