Presentation Information
[We-P-84]Conduction-band-side interface states at the wet-oxidized 4H-SiC(0001)/SiO2 interface revealed by Electrically-Detected-Magnetic-Resonance (EDMR) spectroscopy
*Bunta Shimabukuro1, Keigo Adachi1, Mitsuru Sometani2, Hirohisa Hirai2, Heiji Watanabe3, Takahide Umeda1 (1. Univ. of Tsukuba (Japan), 2. National Inst. for Advanced Indus. Sci. and Tech. (Japan), 3. Univ. of Osaka (Japan))