Presentation Information
[Tu-P-99LN]Substrate-Integrated Point-Defect Engineering by Dynamic AGE-ing for Suppressing Bipolar Degradation and Reverse-Recovery Loss in 4H-SiC MOSFETs
*Koji Ashida1, Daichi Dojima1, Kohei Toda1, Hiroshi Mihara1, Tadaaki Kaneko1,2 (1. QureDA Research, Inc. (Japan), 2. Kwansei Gakuin Univ. (Japan))