Session Details
[Tu-P]Point Defects and Material Properties
Tue. Sep 29, 2026 4:00 PM - 6:00 PM JST
Tue. Sep 29, 2026 7:00 AM - 9:00 AM UTC
Tue. Sep 29, 2026 7:00 AM - 9:00 AM UTC
Poster-A(1st Floor)
[Tu-P-28]Differences in the Distribution of Nonradiative Recombination in PVT- and Solution-Grown SiC Wafers by Laser Heterodyne Photothermal Displacement Method
*Kouyou Harada1, Masashi Kato2, Atsuhiko Fukuyama1 (1. Univ. of Miyazaki (Japan), 2. Nagoya Inst. of Tech (Japan))
[Tu-P-29]Improving of Lithium-Ion Battery Capacity with Heteroepitaxial 3C-SiC
*Jade Croft1, Gerard Colston1, Nicholas Grant1, Claire Hurley1, Luke Wilkins1, Vishal Shah1 (1. The University of Warwick (UK))
[Tu-P-30]Quantitative Photoelastic Imaging of Residual Strains in Commercial Off-Axis SiC Wafers
*Naoto Tsuji1, Ryoya Watanabe1, Masayuki Fukuzawa1 (1. Kyoto Institute of Technology (Japan))
Missing number
[Tu-P-32]Enhanced Emission of Silicon Vacancy in SiC Thin Film by Al2O3 Passivation
*Yurong Ren1, Shuangyou Zhang1, Mingjun Chi1, Karsten Rottwitt1, Haiyan Ou1 (1. Technical University of Denmark (Denmark))
[Tu-P-33]Carrier Lifetime Observation in 4H-SiC PiN Diodes Evaluated by Time-Resolved Electroluminescence
*Tong Li1, Masashi Kato1 (1. Nagoya Inst. of Tech. (Japan))
[Tu-P-34]Detailed μ-PCD Decay Curve Characterization for Defect-Related Recombination in 4H-SiC Epitaxial Layers
*Takumi Wakabayashi1, Kazushi Hayashi2, Hideo Fujii2, Yoshihiro Yokota1, Naoki Okano1, Junji Senzaki3 (1. Kobelco Research Institute, Inc. (Japan), 2. Kobe Steel, Ltd. (Japan), 3. National Institute of Advanced Industrial Science and Technology (AIST) (Japan))
[Tu-P-35]Enhanced methodology for minority charge carrier lifetime
measurements using EBID and frequency-dependent EBIC
*Christian Stefan Gruber1,2, Gregor Pobegen2, Jürgen Smoliner1 (1. TU Wien (Austria), 2. KAI GmbH (Austria))
[Tu-P-86LN]Carrier Lifetime Enhancement by Channeled Ion Implantation in 4H-SiC
*Ben J. Sekely1, Christopher Lamontagne2, Youngsang Kim3, Alecsander N Imhoff1, Nadeemullah Mahadek1, Jenifer R Hajzus1, Rachael L Myers-Ward1, Atul Gupta2, Hank Chen2, Fulvio Mazzamuto2 (1. U.S. Naval Research Laboratory (USA), 2. Axcelis Technologies (USA), 3. Defense Microelectronics Activity (USA))
[Tu-P-87LN]Thermal-Response PL/TR-PL Fingerprinting of B/Al-Dependent Lifetime Stability in n-Type 4H-SiC Wafers
*Rio Kishimoto1, Koji Ashida2, Daichi Dojima2, Hiroshi Mihara2, Tadaaki Kaneko1,2 (1. Kwansei Gakuin Univ. (Japan), 2. QureDA Research, Inc. (Japan))
[Tu-P-99LN]Substrate-Integrated Point-Defect Engineering by Dynamic AGE-ing for Suppressing Bipolar Degradation and Reverse-Recovery Loss in 4H-SiC MOSFETs
*Koji Ashida1, Daichi Dojima1, Kohei Toda1, Hiroshi Mihara1, Tadaaki Kaneko1,2 (1. QureDA Research, Inc. (Japan), 2. Kwansei Gakuin Univ. (Japan))