[Fr-3B] Materials and Wafer Processing | ICSCRM2026

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Session Details

Oral SessionTrack 01 Bulk Growth and Wafer Processing

[Fr-3B]Materials and Wafer Processing

Fri. Oct 2, 2026 2:00 PM - 3:20 PM JST
Fri. Oct 2, 2026 5:00 AM - 6:20 AM UTC

Oral-B(3rd Floor, G303+G304)

Chair:Shunta Harada(Nagoya University, Japan), Takeshi Mitani(AIST, Japan)

2:00 PM - 2:20 PM JST(5:00 AM - 5:20 AM UTC)

[Fr-3B-01]Engineered 4H-SiC Wafers via Mechanical Spalling Process

*Connor Horn¹, Xella Doi¹, Kazuo Doi¹, Sagar Kumar Seth², Supratik Guha² (1. K1 Semiconductor, Inc. (USA), 2. Univ. of Chicago (USA))

2:20 PM - 2:40 PM JST(5:20 AM - 5:40 AM UTC)

[Fr-3B-02]Using multi-spectral linear absorption imaging for volumetric defect tracking and classification in optically transparent 4H-SiC wafers at industrial scale.

*Jimmy Thörnberg¹, Torben L. Purz², Anton Vakulenko², Eric W. Martin², Björn Magnusson¹ (1. STMicroelectronics Silicone Carbide AB (Sweden), 2. MONSTR Sense Technologies (USA))

2:40 PM - 3:00 PM JST(5:40 AM - 6:00 AM UTC)

[Fr-3B-03]Quantitative Modelling of Hot-Zone Degradation and Its Impact on PVT Growth of SiC Crystal

*Andrey Smirnov¹, Laura Ristić¹, Aleksa Crnobrnja¹, Maxim Bogdanov¹, Daria Zimina², Łukasz Kantor³ (1. STR Europe (Serbia), 2. STR US, Inc. (USA), 3. ON Semiconductor Czech Republic, s.r.o. (Czech Republic))

3:00 PM - 3:20 PM JST(6:00 AM - 6:20 AM UTC)

[Fr-3B-04]Bayesian Optimisation for SiC Polishing Simulations Using SSIM

*Roberto Iaconi Iaconi¹, Kevin Richard G. Operiano¹, Susumu Maeda¹, Fumiya Kawate¹, Saeed Sepasy², Yoshifumi Watanabe² (1. AIxtal (Japan), 2. Mipox (Japan))

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