ICSCRM2026
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Session Details

Oral SessionTrack 01 Bulk Growth and Wafer Processing

[Mo-1B]Bulk Growth I

Mon. Sep 28, 2026 3:10 PM - 4:40 PM JST
Mon. Sep 28, 2026 6:10 AM - 7:40 AM UTC
Oral-B(3rd Floor, G303+G304)
Chair:Didier Chaussende(CNRS / Université Grenoble Alpes, France), Chao Gao(SICC, China)
3:10 PM - 3:40 PM JST(6:10 AM - 6:40 AM UTC)

[Mo-1B-01]Development of fast 4H-SiC Bulk Crystal Growth by high-temperature gas-source method

*Takeshi Okamoto1、S. Sakakibara1、D. Uematsu1、H. Uehigashi1、T. Kanda1 ( 1. MIRISE Technologies Corp. (Japan))
3:40 PM - 4:00 PM JST(6:40 AM - 7:00 AM UTC)

[Mo-1B-02]Scaling Laws for Stress-Driven Prismatic Slip Activation in 2-inch to 18-inch SiC Boules

*Kevin Kayang1, Zeyu Chen1, Balaji Raghothamachar1, Michael Dudley1, Dilip Gersappe1 (1. Stony Brook University (USA))
4:00 PM - 4:20 PM JST(7:00 AM - 7:20 AM UTC)

[Mo-1B-03]Realistic Simulation of SiC Crystal Growth with Hybrid Molecular Dynamics and Monte Carlo Approaches

*Alexander Reichmann1, Lorenz Romaner1 (1. Montanuniversität Leoben (Austria))
4:20 PM - 4:40 PM JST(7:20 AM - 7:40 AM UTC)

[Mo-1B-04]Efficient and interpretable optimization of cooling conditions for dislocation density reduction in SiC crystal growth

*Ryo Fukasawa1, Toru Asahi1, Fumihiro Fujie2, Hidekazu Tsuchida2 (1. Waseda Univ. (Japan), 2. Central Res. Inst. of Electric Power Indus. (Japan))
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