[AMD1] Oxide TFT (1)

5:20 PM - 5:40 PM JST(8:20 AM - 8:40 AM UTC)

[AMD1-3] Effects of Boron Doping and Underlying Layer Insertion on Active Layer of In₂O₃-based TFTs

*Mototaka Ochi¹, Aya Hino¹, Tetsuya Miyazawa¹, Taizoh Sadoh², Hiroshi Goto³ (1. Kobe Steel, Ltd. (Japan), 2. Kyushu University (Japan), 3. Kobelco Research Institute Inc. (Japan))

Keywords:

In2O3,In-B-O,SPC,stacked layers,Oxide semiconductor