The 31st International Display Workshops (IDW '24)
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Session Details

Oral PresentationWorkshop on Active Matrix Displays (AMD) : [AMD1] Oxide TFT (1)

[AMD1]Oxide TFT (1)

Wed. Dec 4, 2024 4:40 PM - 6:00 PM JST
Wed. Dec 4, 2024 7:40 AM - 9:00 AM UTC
Room 107
Chair: Toshiaki Arai (Japan Display)
Co-Chair: Keisuke Omoto (Apple)
4:40 PM - 5:00 PM JST(7:40 AM - 8:00 AM UTC)Invited

[AMD1-1(Invited)]Improvement in the Reliability for Polycrystalline Indium Oxide Based Thin-Film Transistors by Epitaxial Passivation Layers

Prashant R. Ghediya1, Yusaku Magari1, Hikaru Sadahira1, Takashi Endo1, Mamoru Furuta2, Yuqiao Zhang3, Yasutaka Matsuo1, *Hiromichi Ohta1 (1. Hokkaido University (Japan), 2. Kochi University of Technology (Japan), 3. Jiangsu University (China))
5:00 PM - 5:20 PM JST(8:00 AM - 8:20 AM UTC)Invited

[AMD1-2(Invited)]Extraction of Intrinsic Field-Effect Mobility in Thin-Film Transistors Using In2O3-Related Oxide Semiconductors

*Takanori Takahashi1, Yukiharu Uraoka1 (1. Nara Institute of Science and Technology (Japan))
5:20 PM - 5:40 PM JST(8:20 AM - 8:40 AM UTC)

[AMD1-3]Effects of Boron Doping and Underlying Layer Insertion on Active Layer of In2O3-based TFTs

*Mototaka Ochi1, Aya Hino1, Tetsuya Miyazawa1, Taizoh Sadoh2, Hiroshi Goto3 (1. Kobe Steel, Ltd. (Japan), 2. Kyushu University (Japan), 3. Kobelco Research Institute Inc. (Japan))
5:40 PM - 6:00 PM JST(8:40 AM - 9:00 AM UTC)

[AMD1-4]Highly Reliable Hydrogen-Doped Polycrystalline Indium Oxide Top-Gate Thin-Film Transistor (InOx:H TFT) with Hydrogen-Free SiO2 Gate Insulator and Boron Implanted Source and Drain Regions

*Mir Mutakabbir Alom1, Motoki Ando1, Yoshihiro Sato2, Takafumi Kambe2, Tsutomu Satoyoshi2, Toshimasa Ui3, Keisuke Yasuta3, Yuya Yamane3, Junichi Tatemichi3, Mamoru Furuta1 (1. Kochi University of Technology (Japan), 2. Tokyo Electron Technology Solutions Ltd. (Japan), 3. Nissin Ion Equipment Co., Ltd. (Japan))
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