[AMD4] Oxide TFT (3)

1:50 PM - 2:10 PM JST(4:50 AM - 5:10 AM UTC)

[AMD4-2] Extremely Excellent Negative-Bias Illumination Stress Stability of Atomic Layer Deposited In-Ga-O Thin-Film Transistors

*Shengjie Yang¹, Xiao Li¹, Jianhua Yan¹, Xinwei Wang¹, Shengdong Zhang¹, Lei Lu¹ (1. Peking University (China))

Keywords:

PEALD-InGaO,Self-Aligned Top-Gate,Negative-Bias Illumination Stress Stability,Annealing Temperature

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