Presentation Information
[FMC6-2L]High Performance Amorphous-IGZTO Thin-Film Transistors with Short Channel Length through Beneficial Coupling Effects of Metal-H Bonding
*Gwang-Bok Kim1, Jae Kyeong Jeong1 (1. Hanyang University (Korea))
Keywords:
Indium gallium zinc tin oxide,thin-film transistor,hydrogen,drain-induced barrier lowering