[OLED3/PH2-3] Enhancing Quantum Efficiency of InP/ZnSe/ZnS Quantum Dots with Thick ZnS Shell using Reactive Sulfur Precursor | Proceedings of the International Display Workshops Volume 31 (IDW '24)

Proceedings of the International Display Workshops Volume 31 (IDW '24)

Dec 4 - Dec 6, 2024Sapporo Convention Center

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Proceedings of the International Display Workshops Volume 31 (IDW '24)

Dec 4 - Dec 6, 2024Sapporo Convention Center

[OLED3/PH2-3]Enhancing Quantum Efficiency of InP/ZnSe/ZnS Quantum Dots with Thick ZnS Shell using Reactive Sulfur Precursor

*Kangwoo Lee¹, Boram Kim¹, Yonghyeok Choi¹, Mina Kim¹, Jinseop Yoon¹, Jinchul Park¹, Eunjoo Jang¹, Heeyeop Chae¹(1. Sungkyunkwan University (Korea))

https://doi.org/10.36463/idw.2024.0596

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Keywords:

InP quantum dots,S precursor reactivity,Förster energy transfer

The quantum efficiency of indium phosphide (InP) quantum dots (QDs) with thick-zinc sulfide (ZnS) shell improved by using reactive hexamethyldisilazane ((TMS)₂S) as a sulfur (S) precursor. This method prevents anisotropic growth and suppresses nonradiative Förster energy transfer, enhancing photoluminescence quantum yield by 10% compared to conventional S powder.

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