Presentation Information
[2(Invited)]Atomic Layer Deposited Polycrystalline Ga-doped In2O3 Nanosheet for Field-Effect Transistor Applications(20min.)
*Takanori Takahashi1, Takuya Hoshii2, Yuki Tsuruma3, Misa Sunagawa3, Shigekazu Tomai3, Jongho Park2, Hiroki Tamamoto2, Kuniyuki Kakushima2, Yukiharu Uraoka1 (1. Nara Institute of Science and Technology (Japan), 2. Institute of Science Tokyo (Japan), 3. Idemitsu Kosan Co., Ltd. (Japan))
Keywords:
atomic layer deposition,oxide semiconductor,field-effect transistor,polycrystalline,IGO
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