[AMD5] Oxide TFT (3)

9:20 AM - 9:40 AM JST(12:20 AM - 12:40 AM UTC)

[AMD5-2(Invited)] Atomic Layer Deposited Polycrystalline Ga-doped In₂O₃ Nanosheet for Field-Effect Transistor Applications

*Takanori Takahashi¹, Takuya Hoshii², Yuki Tsuruma³, Misa Sunagawa³, Shigekazu Tomai³, Jongho Park², Hiroki Tamamoto², Kuniyuki Kakushima², Yukiharu Uraoka¹ (1. Nara Institute of Science and Technology (Japan), 2. Institute of Science Tokyo (Japan), 3. Idemitsu Kosan Co., Ltd. (Japan))

Keywords:

atomic layer deposition,oxide semiconductor,field-effect transistor,polycrystalline,IGO

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