Presentation Information

[4]Hydrogen-Resistant IGZO TFT with Nitrogen-Engineered SiO2 Gate Insulator via PEALD(20min.)

*Juwon Kim1, Ji Yeon Park1, Seong-A Shin1, Tae Heon Kim1, Jin-Seong Park1 (1. Hanyang University (Korea))

Keywords:

Nitrogen Doping,Hydrogen-Resistance,N2O Plasma,IGZO,Thin Film Transistor


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