Presentation Information
[AMD5-4]Hydrogen-Resistant IGZO TFT with Nitrogen-Engineered SiO2 Gate Insulator via PEALD
*Juwon Kim1, Ji Yeon Park1, Seong-A Shin1, Tae Heon Kim1, Chang-Kyun Park1, Jin-Seong Park1 (1. Hanyang University (Korea))
Keywords:
Nitrogen Doping,Hydrogen-Resistance,N2O Plasma,IGZO,Thin Film Transistor
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