Presentation Information
[AMDp1-18]Fabrication and Characterization of Top-Gate In-Ga-O Thin-Film Transistors Using Aqueous Precursor Solutions and Excimer Light Irradiation
*Hideya Ochiai1, Kazuki Ueda1, Takuya Nomura1, Akira Fujimoto1, Hideo Wada1, Masatoshi Koyama1, Akihiko Fujii1, Akihiro Shimizu2, Noritaka Takezoe2, Hiroyasu Ito2, Toshihiko Maemoto1 (1. Osaka Institute of Technology (Japan), 2. Ushio Inc. (Japan))
Keywords:
oxide semiconductor,thin-film transistors,indium oxide,solution method,excimer light
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