Presentation Information
[FLXp1-12L]Investigation of Hole Storage Characteristics in Organic Floating-Gate Memory for NAND Flash Memory Applications
*Keita Yamazaki1, Takashi Kobayashi1, Hiroyoshi Naito1,2, Takashi Nagase1 (1. Osaka Metropolitan University (Japan), 2. Ritsumeikan University (Japan))
Keywords:
Organic transistor,Nonvolatile memory,Floating-gate memory,NAND flash memory
Password required to view
To view or download the proceedings, please log into your A-Pass using the "Log in" button.
If you do not have a A-Pass, enter the password provided by the IDW Secretariat in the designated box and click the "Authenticate" button.
If you do not have a A-Pass, enter the password provided by the IDW Secretariat in the designated box and click the "Authenticate" button.
Log in
or
Comment
To browse or post comments, you must log in.Log in
