Presentation Information

[FMCp1-35L]Improvement of Electrical Properties of SiO2 Gate Insulator by Nitric Oxide Plasma Treatment

*Yunhui Jang1, Yeojin Jeong1, Junsin Yi1 (1. Sungkyunkwan University (Korea))

Keywords:

Nitric Oxide,Silicon dioxide,a-IGZO TFT,PECVD


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