Presentation Information
[FMCp1-35L]Improvement of Electrical Properties of SiO2 Gate Insulator by Nitric Oxide Plasma Treatment
*Yunhui Jang1, Yeojin Jeong1, Junsin Yi1 (1. Sungkyunkwan University (Korea))
Keywords:
Nitric Oxide,Silicon dioxide,a-IGZO TFT,PECVD
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