Presentation Information

[MEET5-3]Impact of Crystal Quality of Ud-GaN Layer on Red Light Emission Efficiency of Eu,O-Codoped GaN-LED

*Katsuji Iguchi1, Hidenori Kawanishi1, Norio Kanzaki1, Kazutsune Miyanaga1, Takeo Ogura1, Yasufumi Fujiwara1 (1. Ritsumeikan University (Japan))

Keywords:

Eu-doped-GaN,GaN:Eu,621nm

Password required to view

To view or download the proceedings, please log into your A-Pass using the "Log in" button.

If you do not have a A-Pass, enter the password provided by the IDW Secretariat in the designated box and click the "Authenticate" button.

Comment

To browse or post comments, you must log in.Log in