Presentation Information
[MEETp2-2]Ferroelectric Behavior of Al-Doped HfO2 with IGZO Interface under 450℃ Processing for Non-Volatile Memory Devices
*Gahong Lee1, Junsin Yi1 (1. Sunkyunkwan University (Korea))
Keywords:
HfAlO,Low-temperature Processing,Ferroelectric Memory,IGZO Channel Integration
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