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Ferroelectric Behavior of Al-Doped HfO<sub>2</sub> with IGZO Interface under 450℃ Processing for Non-Volatile Memory Devices

Micro/Nanodisplays and Their Novel Materials/Components/Process Technologies

The 32nd International Display Workshops (IDW '25)

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[2]Ferroelectric Behavior of Al-Doped HfO₂ with IGZO Interface under 450℃ Processing for Non-Volatile Memory Devices

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Presentation Information

[2]Ferroelectric Behavior of Al-Doped HfO2 with IGZO Interface under 450℃ Processing for Non-Volatile Memory Devices

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[2]Ferroelectric Behavior of Al-Doped HfO₂ with IGZO Interface under 450℃ Processing for Non-Volatile Memory Devices