Presentation Information
[2(Invited)]Defect Dynamics and BTI Evolution in Hydrogen-Resilient Doped InO TFTs During 400oC BEOL Forming Gas Annealing(20min.)
*Yu-Hsin Michael Kuo1, Chengyang Zhang1, Priyankka Ravikumar1, Sanghyun Kang1, TaeYoung Song1, Marco Villena2, Luca Larcher3, Hwan Kim4, Minji Hong4, Pilsang Yun4, Gaurav Thareja3, Shimeng Yu1, Daewon Ha4, Suman Datta1, Julia Medvedeva5, Asif Khan1 (1. Georgia Institute of Technology (USA), 2. University of Granada (Spain), 3. Applied Materials (USA), 4. Samsung Electronics Company Ltd. (Korea), 5. Missouri University of Science and Technology (USA))
Keywords:
Oxide semiconductor,Forming gas annealing (FGA),Hydrogen barrier
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