Session Details
[AMD6]Oxide TFT (3)
Fri. Dec 4, 2026 10:50 AM - 11:50 AM JST
Fri. Dec 4, 2026 1:50 AM - 2:50 AM UTC
Fri. Dec 4, 2026 1:50 AM - 2:50 AM UTC
Room 7 (Room 53+54)(5th Floor)
Chair: Hiroki Hamada (Kindai Univ.)
Co-Chair: Mototaka Ochi (Kobe Steel Ltd.)
Co-Chair: Mototaka Ochi (Kobe Steel Ltd.)
[1(Invited)]3D Stackable Gate-All-Around Oxide-Semiconductor FETs for Future High-Density and Low-Power 3D DRAM(20min.)
*Nobuyoshi Saito1 (1. KIOXIA Corporation (Japan))
[2(Invited)]Defect Dynamics and BTI Evolution in Hydrogen-Resilient Doped InO TFTs During 400oC BEOL Forming Gas Annealing(20min.)
*Yu-Hsin Michael Kuo1, Chengyang Zhang1, Priyankka Ravikumar1, Sanghyun Kang1, TaeYoung Song1, Marco Villena2, Luca Larcher3, Hwan Kim4, Minji Hong4, Pilsang Yun4, Gaurav Thareja3, Shimeng Yu1, Daewon Ha4, Suman Datta1, Julia Medvedeva5, Asif Khan1 (1. Georgia Institute of Technology (USA), 2. University of Granada (Spain), 3. Applied Materials (USA), 4. Samsung Electronics Company Ltd. (Korea), 5. Missouri University of Science and Technology (USA))
[3(Invited)]The Potential of Resistive Memory Devices Based on Oxide Semiconductors(20min.)
*Alwin Daus1 (1. University of Stuttgart (Germany))