Presentation Information
[3]Stability Enhancement of a-IGZO Thin-Film Transistors through H2 Plasma Treatment and Post Annealing
*Taeyang Kim1, Hyeonjeong Sun1, Seungmin Choi1, Seungjae Lee1, Yeoeun Yun1, Suhwon Choi1, Heesun Lim1, Seung-Beck Lee1 (1. Hanyang University (Korea))
Keywords:
a-IGZO TFT,Hydrogen Plasma Treatment,Deep Trap Passivation,Post Annealing,Bias Stress Stability
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