Presentation Information

[8]Optimization of Sputtered Ga2O3 Passivation Conditions for a-IGZO TFT Bias Stress Stability

*Suhwon Choi1, Hyeonjeong Sun1, Seungmin Choi1, Seungjae Lee1, Yeoeun Yun1, Taeyang Kim1, Heesun Lim1, Seung-Beck Lee1 (1. Hanyang University (Korea))

Keywords:

a-IGZO TFT,Ga2O3 passivation,Oxygen-related trap,Stability Enhancement


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