Session Details
[AMD1]AI Boosted and Novel Process Technologies
Wed. Dec 2, 2026 12:50 PM - 1:50 PM JST
Wed. Dec 2, 2026 3:50 AM - 4:50 AM UTC
Wed. Dec 2, 2026 3:50 AM - 4:50 AM UTC
Room 22＋23 (2nd Floor)
Chair: Masahide Inoue (Huawei Techs. Japan)
Co-Chair: Hiroshi Tsuji (NHK)
Co-Chair: Hiroshi Tsuji (NHK)
[1(Invited)]AI Co-Scientist for Display Manufacturing: Bridging Academic Vision and Industrial Practice(20min.)
*Kyongtae Park1 (1. Samsung Display Co., Ltd. (Korea))
[2(Invited)]Efficient High-Mobility Oxide Thin Film Transistor Process Optimization by AI(20min.)
*Yujiro Takeda1、Wei-Chun Ma1、Elliot Lu1、Yu-Hsuan Hsu1、Dejiu Fan2、Jung Bae Kim2、Lynn Yang1、Ping Han Hsieh1、Gejian Zhao2、You-Ron Lin1、Juergen Grillmayer1、Zero Hung2、Soo Young Choi2 (1. Applied Materials, Taiwan (Taiwan), 2. Applied Materials, Inc. (USA))
[3]Metal-Induced Dual-Channel Formation in High-Mobility Zinc Tin Oxide Thin-Film Transistors(20min.)
*Dayul Nam1, Seong-Pil Jeon1, Seung Hoon Baek1, Seungbin Park1, Yong-Hoon Kim2, Sung Kyu Park1 (1. Chung-Ang University (Korea), 2. Sungkyunkwan University (Korea))