[O1-7] Medium Voltage Power Electronics

11:35 AM - 11:55 AM JST(2:35 AM - 2:55 AM UTC)

[O1-7-02] Characterization of 3.3 kV SiC Switches: Short-Circuit Robustness of Uni-directional MOSFETs and Switching Performance of Monolithic BiDFETs

Qihao Luo¹, Pengyu Fu¹, Juchen Yang¹, Euler Valdivieso¹, Yizhou Cong¹, Zhining Zhang¹, *Jin Wang¹, Anant Agarwal¹, Ajit Kanale², Ashish Kumar², Stanley Atcitty³ (1. The Ohio State University (USA), 2. Wolfspeed, Inc. (USA), 3. Sandia National Laboratories (USA))

Keywords:

silicon carbide,medium voltage,BiDFET,short circuit withstand time