[O11-1] Research Results of MEXT Program Innovative Power Electronics Technologies

4:20 PM - 4:40 PM JST(7:20 AM - 7:40 AM UTC)

[O11-1-07] Present Status and Future Prospects of GaN Vertical Power Devices

*Hiroshi Amano^1,2, Jun Suda^2,1 (1. Instatitute for Materials and Systems for Sustainability (IMaSS), Nagoya Univesrity (Japan), 2. Department of Electronics, Nagoya University (Japan))

Keywords:

GaN,MOSFETs,Power Devices