[O13-3] Industry Technology Session in Semiconductor Power Conversion 1

2:20 PM - 2:40 PM JST(5:20 AM - 5:40 AM UTC)

[O13-3-02] Molded Interconnect Substrate (MIS)-Based GaN Power Module Enabling High-Efficiency and Compact System Integration

Qinghong Liu¹, *Ziying Li¹, Chang Huang¹, Qingyuan Tang¹ (1. Fenghua Semiconductor Technology Co., Ltd . (China))

Keywords:

GaN HEMT,MIS,Half-Bridge Module