[O2-2] Implementation and Analysis of Next-Gen GaN and UHF Circuits

3:30 PM - 3:50 PM JST(6:30 AM - 6:50 AM UTC)

[O2-2-04] Multidimensional Capacitance Characterization of Monolithic Bidirectional GaN HEMTs using Four-Port S-Parameter Measurements

*Magnus Haitz^1,2, Cristino Salcines¹, Mathias C. J. Weiser², Aline Reck², Ingmar Kallfass² (1. Robert Bosch GmbH (Germany), 2. University of Stuttgart (Germany))

Keywords:

Bidirectional Switch,Capacitance Measurement,Characterization,GaN HEMT