[O2-2] Implementation and Analysis of Next-Gen GaN and UHF Circuits

3:50 PM - 4:10 PM JST(6:50 AM - 7:10 AM UTC)

[O2-2-05] Multidimensional Capacitance Model for Monolithic Bidirectional GaN HEMTs

*Magnus Haitz^1,2, Cristino Salcines¹, Ingmar Kallfass² (1. Robert Bosch GmbH (Germany), 2. University of Stuttgart (Germany))

Keywords:

Bidirectional Switch,Capacitance,Compact Model,GaN HEMT